Shintaro Miyazawa

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17 Publications

Publication								Year
Transmission Electron Microscope Observations of Interfaces in YBa₂Cu₃O_x/BaSnO₃/YBa₂Cu₃O_x trilayers Authors : Shintaro Miyazawa Shintaro Miyazawa , Masashi Mukaida Masashi Mukaida Journal : Japanese Journal of Applied Physics Journal Reference count : 16 Volume : 37 Pages : L949								1998
Formation of Stacking-Faults in Atomic Graphoepitaxial a-Axis YBa₂Cu₃O_x Thin Films on (100) SrLaGaO₄ Substrates Authors : Shintaro Miyazawa Shintaro Miyazawa , Masashi Mukaida Masashi Mukaida Journal : Japanese Journal of Applied Physics Journal Reference count : 11 Volume : 35 Pages : L1177								1996
Top-seeded solution growth of Bi 12 TiO 20 single crystals doped with P Authors : Shintaro Miyazawa Journal : Journal of Crystal Growth Journal Reference count : 14 Volume : 167 Pages : 638-643								1996
Ferroelectric Microdomains in Ti-diffused LiNbO₃ Optical Devices Authors : Toshinori Nozawa Toshinori Nozawa , Shintaro Miyazawa Shintaro Miyazawa Journal : Japanese Journal of Applied Physics Journal Reference count : 22 Volume : 35 Pages : 107								1996
Nature of Preferred Orientation of YBa₂Cu₃O_x Thin Films Authors : Masashi Mukaida Masashi Mukaida , Shintaro Miyazawa Shintaro Miyazawa Journal : Japanese Journal of Applied Physics Journal Reference count : 30 Volume : 32 Pages : 4521								1993
Growth and Crystallographic Analysis of YBa₂Cu₃O_x Thin Films on NdGaO₃ Substrates Authors : Masashi Mukaida Masashi Mukaida , Shintaro Miyazawa Shintaro Miyazawa Journal : Japanese Journal of Applied Physics Journal Reference count : 25 Volume : 31 Pages : 3317								1992
Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs Authors : Shintaro Miyazawa Journal : Progress in Crystal Growth and Characterization of Materials Journal Reference count : 72 Volume : 23 Pages : 23-71								1992
Surface roughening associated with ∼140 °C transition of a LaGaO3 substrate for high T c superconducting films Authors : Shintaro Miyazawa Journal : Applied Physics Letters Journal Reference count : 7 Volume : 55 Pages : 2230-2232								1989
Response to ‘‘Comment on ‘Domain inversion effects in Ti-LiNbO3 integrated optical devices’ ’’ [Appl. Phys. Lett. 4 8, 1104 (1986)] Authors : Shintaro Miyazawa Journal : Applied Physics Letters Journal Reference count : 6 Volume : 48 Pages : 1104-1105								1986
Fundamental Defects in GaAs: Present and Prospective in GaAs Microelectronics Technology Authors : Shintaro Miyazawa Journal : Materials Science Forum Volume : 10-12 Pages : 1-8								1986
Characteristics of semi-insulating GaAs crystal for GaAs ICs. Authors : Shintaro MIYAZAWA Journal : Nihon Kessho Gakkaishi Volume : 28 Pages : 92-102								1986
Shaped Melt Lowering (SML): A novel growth technique permitting keff= 1 Authors : Shintaro Miyazawa Journal : Journal of Crystal Growth Journal Reference count : 14 Volume : 60 Pages : 331-337								1982
Striation etching of undoped, semi-insulating lec-grown GaAs Authors : Shintaro Miyazawa Journal : Journal of Crystal Growth Journal Reference count : 6 Volume : 57 Pages : 459-461								1982
Fluid-flow analysis in a czochralski simulation Authors : Shintaro Miyazawa Journal : Journal of Crystal Growth Journal Reference count : 12 Volume : 53 Pages : 636-638								1981
Fluid-flow effect on gas-bubble entrapment in Czochralski-grown oxide crystals Authors : Shintaro Miyazawa Journal : Journal of Crystal Growth Journal Reference count : 15 Volume : 49 Pages : 515-521								1980
Ferroelectric domain inversion in Ti-diffused LiNbO3 optical waveguide Authors : Shintaro Miyazawa Journal : Journal of Applied Physics Journal Reference count : 21 Volume : 50 Pages : 4599-4603								1979
Growth of LiNbO3 single-crystal film for optical waveguides Authors : Shintaro Miyazawa Journal : Applied Physics Letters Journal Reference count : 11 Volume : 23 Pages : 198-200								1973

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Shintaro miyazawa

17 Publications

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Shintaro miyazawa

17 Publications

You can also search
by the journal's Country or the impact indicator H-index.